Micron Technology DRAM SDRAM-DDR2, Part #: MT40A1G16TB-062E:F TR | Dynamic random access memory | DEX 15.6 in with input receiver characteristics programmable

with input receiver characteristics programmable per pin • Selectable external or internal VREF for CA inputs

VRA:VT1135SFCR

while consuming 50% less power than previous generation devices to offer a fully programmable alternative to ASSPs and ASICs

using Phase-Locked-Loop (PLL) techniques

16 level deep hardware stack

Micron Technology DRAM SDRAM-DDR2, Part #: MT40A1G16TB-062E:F TR | Dynamic random access memory | DEX 15.6 in with input receiver characteristics programmableMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G16TB 062E: F TR uses Microns 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. Features: Uses two x8 8Gb Micron die to make one x16 Single rank TwinDie VDD = VDDQ = 1. 2V (1. 141. 26V) 1. 2V VDDQ terminated I O JEDEC standard ball out Low profile package TC of 0C to