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Micron Technology DRAM SDRAM, Part #: MT41K256M16TW-107 AAT:P TR | Dynamic random access memory | DEX integrated circuits 4G0-035-056-H

SKU: 49571570662

4.1
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Description

4G0-035-056-H

5 kV 4-channel digital isolator

5T: 53-S30-64 53-S30A-64

This 3 ply Face Mask is meant to cover the mouth

Murata Electronics Chip Multilayer Ceramic Capacitor

Micron Technology DRAM SDRAM, Part #: MT41K256M16TW-107 AAT:P TR | Dynamic random access memory | DEX integrated circuits 4G0-035-056-HMicron Technology DRAM SDRAM DDR3L, Part #: MT41K256M16TW 107 AAT: P TR is a low voltage version of the DDR3 (1. 5V) SDRAM. Features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT)

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