Micron Technology DRAM SDRAM-DDR4, Part #: MT41K2G4RKB-107:P | Dynamic random access memory | DEX amplifier ± 3% RH (max)

± 3% RH (max)

Analog Devices RF Switch IC Part #HMC252AQS24ETR

GEC:5154662

Part #: MT46H64M32LFBQ-48 IT:C features: • VDD/VDDQ = 1

VSH:VS-U5FH120FA60

Micron Technology DRAM SDRAM-DDR4, Part #: MT41K2G4RKB-107:P | Dynamic random access memory | DEX amplifier ± 3% RH (max)Micron Technology DRAM SDRAM DDR3L, Part #: MT41K2G4RKB 107: P features: Uses 4Gb Micron die Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) Each rank has eight internal banks for concurrent operation VDD = VDDQ = 1. 35V (1. 2831. 45V); backward compatible to VDD = VDDQ = 1. 5V 0. 075V 1. 35V center terminated push pull I O JEDEC standard ball out Low profile package TC of 0C to 95C 0C to 85C: 8192 refresh cycles in 64ms 85C to 95C: 8192 refresh