Micron Technology DRAM SDRAM-DDR4, Part #: MT44K16M36RB-093E IT:B | Dynamic random access memory | DEX Renewable Energy Reduced switching and conduction losses

Reduced switching and conduction losses

Product Family: AMD EPYC

Operating Temp

General Purpose Step-Down

100 % Rg and UIS tested

Micron Technology DRAM SDRAM-DDR4, Part #: MT44K16M36RB-093E IT:B | Dynamic random access memory | DEX Renewable Energy Reduced switching and conduction lossesMicron Technology DRAM , Part #: MT44K16M36RB 093E IT: B features: 1066 MHz DDR operation (2133 Mb s ball data rate) 76. 8 Gb s peak bandwidth (x36 at 1066 MHz clock frequency) Organization 32 Meg x 18, and 16 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ I O Reduced cycle time (t RC (MIN) = 7. 5 12ns) SDR addressing Programmable READ WRITE latency (RL WL) and burst length Data mask for