Micron Technology DRAM SDRAM-DDR4, Part #: MT46H128M16LFDD-48 IT:C TR | Dynamic random access memory | DEX mouse RAM content is retained

RAM content is retained

The typical power dissipation is 3

Quiescent current is also well controlled in dropout

Operating Temperature

10 µs typical settling time

Micron Technology DRAM SDRAM-DDR4, Part #: MT46H128M16LFDD-48 IT:C TR | Dynamic random access memory | DEX mouse RAM content is retainedMicron Technology DRAM SDRAMMobile , Part #: MT46H128M16LFDD 48 IT: C TR features: VDD VDDQ = 1. 701. 95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; 2 data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge aligned with data for READs; centeraligned with data for WRITEs 4 internal banks for concurrent operation Data masks (DM)