Micron Technology DRAM SDRAMMobile-, Part #: MT40A256M16LY-062E:F | Dynamic random access memory | DEX Information IS200AEPCH1A

IS200AEPCH1A

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Xiilnx FPGA Part #XC4VLX25-12SFG363C

NXP Semiconductors

3-2008 • Low power capabilities – Versatile low power modes – Ultra low power standby with RTC – Smart Wake-up Unit for contact monitoring – Fast wakeup schemes • Dual phase-locked loops with stable clock domain for peripherals and FM modulation domain for computational shell

Micron Technology DRAM SDRAMMobile-, Part #: MT40A256M16LY-062E:F | Dynamic random access memory | DEX Information IS200AEPCH1AMicron Technology DRAM SDRAM DDR4, Part #: MT40A256M16LY 062E: F features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe